tellurium  Te
Available form
Lump/ingot/powder
Application field
Application Field
[99.999% Tellurium]
 
1. Technical connection: anode slime of lead-zinc mine and copper mine -- enrichment -- electrolysis -- vacuum distillation -- hydrodeoxygenation -- regional smelting;
 
2. Physical properties:
 
Atomic weight: 127.60
 
Electronegativity: 2.1
 
Density: 6.24 g/cm3
 
Melting point: 449.51 ℃
 
Boiling point: 998 ℃
 
Physical properties: block, ingot, powder.
 
4. Purpose:
 
Is mainly used for the preparation of Ⅱ - Ⅵ compound semiconductor, solar cell, thermoelectric conversion element, refrigeration components, gas sensitivity, thermal, pressure-sensitive and light-sensitive, piezoelectric crystal and nuclear radiation detection, infrared detectors and other basic materials.
Product description
Describe
[99.999% Tellurium]
1. Technical connection: anode slime of lead-zinc mine and copper mine -- enrichment -- electrolysis -- vacuum distillation -- hydrodeoxygenation -- regional smelting;
2. Test: icp-ms,GDMS, laser particle size analyzer, scanning electron microscope.
3. Service: provide practical protective measures and material application solutions.
4. Physical properties:
Atomic weight: 127.60
Electronegativity: 2.1
Density: 6.24 g/cm3
Melting point: 449.51 ℃
Boiling point: 998 ℃
5. Specifications:
Chemical purity:
High purity tellurium: Te-05 purity 99.999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 10ppm;
Ultra pure tellurium: Te-06 purity 99.9999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 1ppm;
Ultra high purity tellurium: Te 07 purity 99.99999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 0.1 PPM.
6. Physical properties: block, ingot, powder.
7. Purpose:
Is mainly used for the preparation of Ⅱ - Ⅵ compound semiconductor, solar cell, thermoelectric conversion element, refrigeration components, gas sensitivity, thermal, pressure-sensitive and light-sensitive, piezoelectric crystal and nuclear radiation detection, infrared detectors and other basic materials.
8. Packaging: plastic film vacuum packaging after polyester film packaging or polyethylene bottle vacuum packaging.
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